Samsung has developed a global DRAM memory chips minimum speed increase of 10%.
Samsung electronics announced 20, the company has begun by the second generation of 10 nm process technology of production of DRAM memory chips.
Samsung said, the company the use of the second generation of 10 nm process produces the 8 gb DDR4 chip, realize the new breakthrough.In February 2016, samsung has used the first generation of 10 nm process out of the 8 gb DDR4 chips.
Reuters reported, and the development of samsung 8 gb DDR4 chip is "global minimum" DRAM chips, expand the leading opponent's advantage.Under the impetus of the semiconductor business, samsung's operating profit is expected to hit a record this year.
Samsung said, compared with the first generation of 10 nanoscale technology, production capacity increased by 30% of the second generation process, help the company meet the demand of DRAM chips surging global customers.Moreover, the second generation of 10 nm 10% faster than the first generation of chip, power consumption reduced by 15%.
As the world's largest chip maker, samsung said, and the use of 20, 2012, compared to the production of nano 4 gb DDR3 chips new 8 gb DDR4 chips on the capacity, speed and efficiency are improved.
Samsung said the company hopes to expand 10 nm DRAM chips production, further enhance the overall competitiveness.Samsung also said that the company will use new technology to produce more high quality product for the customer, using the latest technology progress, dig servers, mobile and graphics chip market.In 2018, samsung will move most of the existing capacity of DRAM chips to 10 nm chip.
Samsung at the end of October for semiconductor unit and so on three major business has appointed a new generation of head.Samsung said, the company does not seek immediate expand chip shipments, but will keep the long-term market position.