Strong expansion SiC, ROM 2023+ mass production 8 inch silicon carbide substrate

Mar 1, 2023

Strong expansion SiC, ROM 2023+ mass production 8 inch silicon carbide substrate.

In order to meet the market demand, Rohm is constantly making equipment investment, etc., and has made a large equipment investment plan in 2022, especially in the main power components. Its sales target is to achieve the expected compound annual growth of 25% in recent years.

In 2010, ROM became the first manufacturer in the world to mass-produce SiC mosFEts, followed by the release of the 4th generation grooved sic Mosfets in 2021. In order to meet the market demand, ROM is constantly developing products and expanding production capacity. "In 2023, ROM will begin mass production of 8-inch SIC substrate, followed by traction power modules." Zhou Jin, deputy general manager of Technology Center of ROHM Semiconductor (Shanghai) Co., LTD., revealed in the recent media exchange meeting.

Mass production of 8 "SIC substrate in 2023.

In 2009, Rohm completed the vertical integration of IDM production system by bringing SiCrystal, the world's leading supplier of silicon carbide substrate, into the Group.
The same is true of silicon carbide production. Wafers are made at the Group's German SiCrystal company, and the production of devices is concentrated in Fukuoka and Miyazaki, Japan. Packaging is then distributed around the world, mainly in the local packaging plants in Kyoto, Korea or Thailand.
In addition, ROM will also increase the diameter of wafers, improve production efficiency, and further reduce the cost of silicon carbide devices. In 2017, ROM will fully enter the era of 6-inch silicon carbide wafers, and by 2023 will realize the mass production of 200mm or 8-inch substrate. At the same time, it is possible to increase the size of individual components through ROM's superior technology. The current mainstream size is 25 sq mm from 2015 to 50 sq mm by 2024 to support higher current output requirements.

The 4th generation of silicon carbide product advantage.

In 2021 ROM released its 4th generation grooved SiC MosFEts. The fourth generation of silicon carbide products with low loss, simple use, high reliability three characteristics.
The first is low loss. Compared with the new products of Generation 3 and 4, ROM has achieved a 40% reduction by reducing the standard conduction impedance, the same size chip, Generation 3 is about 30 milliohm, generation 4 can achieve 18 milliohm conduction impedance reduction, the benefit is that the loss will also be reduced by 40% level.

Another situation is to improve the switching characteristics, reduce the specific conduction impedance, the same current, the same conduction impedance, chip size will be reduced, parasitic capacitance will be reduced, easy to achieve high speed switching characteristics.
Compared with the efficiency in the case of impedance, from the point of view of loss, the conduction loss is reduced by about 53%, reducing the heat. At the same on-off impedance, ROM offers smaller chip sizes and improvements in features such as parasitic capacitance.

Third, reliability is further improved. It is generally believed that the risk caused by RonA reduction is directly the reduction of SCWT. However, according to ROM's study, the compromise of these two parameters can be optimized by reducing the saturation current.

Previously, Romm 4th generation silicon Carbide products have been mass produced in 2021, through the industry's advanced low on-resistance technology, according to the design of components, groove structure strengthening, groove design, the on-resistance (RonA) can be reduced by 40% in the 4th generation compared to the original 3rd generation, the future plan is to reduce by another 30% in 2025 and 2028, respectively. Realize the 5th and 6th generation product iteration.

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