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SI7922DN-T1-GE3

Part Number SI7922DN-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 100V 1.8A 1212-8
Data sheet SI7922DN-T1-GE3.pdf
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
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Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.8A
Rds On (Max) @ Id, Vgs 195 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email [email protected] or Inquires online

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